Paper
27 December 2002 Image Placement Distortions in EPL Masks
Author Affiliations +
Abstract
Electron projection lithography (EPL) is a promising candidate for the next generation lithography choice. There are several advantages to EPL, such as a large depth of focus and a lower relative mask cost. Significant challenges also face this technology, including the limitation of the membrane format of the mask. One of the obstacles with the membrane format is image placement distortions, which can be very sensitive to the stress of the membrane as well as the pattern density. This paper studies how the stress of various types of films effects image placement distortions, as well as examines the effect of final mask cleans on image placement distortions.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carey W. Thiel, Louis Kindt, and Mark Lawliss "Image Placement Distortions in EPL Masks", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467756
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Photomasks

Boron

Line edge roughness

Electron beam lithography

Etching

Semiconducting wafers

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