Inspection capability of chromeless phase-shift masks for the 90-nm node

Darren Taylor

doi:10.1117/12.467507

Translator Disclaimer

27 December 2002 Inspection Capability of Chromeless Phase-Shift Masks for the 90-nm Node

Darren Taylor

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467507
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

Today's wafer fabs are trying to extend KrF lithography as far as possible and soon, ArF lithography will be in the same situation. To accomplish this extension, many reticle enhancement techniques (RETs) are being investigated for their capability and cost of ownership. In addition to the more common forms of RETs used today (eg. - OPC, EAPSM, etc.), chromeless phase lithography (CPL) is now being considered as a viable solution to achieving higher resolution and better process window. CPL is a type of alternating aperture phase shift mask (AAPSM) that uses minimal or no chrome. The features formed with CPL masks leverage parallel lines of etched and unetched glass to print tighter pitch lines and spaces than were originally possible with binary masks. The need to control glass defects on exposed glass shifter edges puts defect inspection in the critical path for making this technology successful. This study focuses on the practical inspection capability of CPL masks scanning by an automatic inspection tools was achieved. A programmed defect test mask was fabricated, designed for the 90nm lithography node, and inspection techniques were refined to measure the sensitivity across the existing inspection tool base for this technology.

Citation Download Citation

Darren Taylor "Inspection Capability of Chromeless Phase-Shift Masks for the 90-nm Node", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467507

ACCESS THE FULL ARTICLE