Optimizing etch uniformity for alternating aperture phase-shift masks on Etec Systems Tetra photomask etch system

Nabila Lehachi Waheed; Cynthia J. Brooks

doi:10.1117/12.468202

27 December 2002 Optimizing etch uniformity for alternating aperture phase shift masks on Etec Systems' Tetra photomask etch system

Nabila Lehachi Waheed, Cynthia J. Brooks

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468202
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

A simple method for minimizing the glass etch non-uniformity in the Etec Systems' Tetra etch tool will be presented along with etch rate performance stability results. In this triple etch process, the final phase uniformity was improved from ± 5 ° to ± 1.3 ° phase shift at 248 nm without changing either processing chemistry or any other process parameters. The procedure used to obtain this improved uniformity as well as maps illustrating the depth distribution over the plate after each step will be given.

Citation Download Citation

Nabila Lehachi Waheed and Cynthia J. Brooks "Optimizing etch uniformity for alternating aperture phase shift masks on Etec Systems' Tetra photomask etch system", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468202

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE