Optimum PEC conditions under resist heating effect reduction for 90-nm-node mask writing

Eu Sang Park; Jong Hwa Lee; Dong Il Park; Woo Gun Jeong; Soon Kyu Seo; Jin Min Kim; Sang-Soo Choi; Soo-Hong Jeong

doi:10.1117/12.467899

27 December 2002 Optimum PEC Conditions Under Resist Heating Effect Reduction for 90nm Node Mask Writing

Eu Sang Park, Jong Hwa Lee, Dong Il Park, Woo Gun Jeong, Soon Kyu Seo, Jin Min Kim, Sang-Soo Choi, Soo-Hong Jeong

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467899
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

For high-voltage vector e-beam writing systems, solving the resist heating effect problem is one of the highest priorities because it is a major factor affecting localized critical dimension (CD) uniformity. In order to write patterns for 90nm node devices, the utilization of proximity effect correction (PEC) is essential for e-beam mask writers to achieve high CD performance. In this study, the dependence of CD variation on e-beam write conditions was investigated under optimum PEC parameter conditions. Writing conditions such as current density, shot size, number of writing passes, and settling time were tested to see their affects on resist heating. Industry-standard Nippon Zeon ZEP 7000 resist was written by a Toshiba EBM-3500B 50KeV vector e-beam writer using patterns found in sub-130nm node devices. Results indicated that the main factor affecting resist heating CD variation for ZEP 7000 was in fact the e-beam writer shot size selected. Multi-pass writing was effective in reducing the CD variation, and the settling time of each shot in the EBM-3500B had very little influence.

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Eu Sang Park, Jong Hwa Lee, Dong Il Park, Woo Gun Jeong, Soon Kyu Seo, Jin Min Kim, Sang-Soo Choi, and Soo-Hong Jeong "Optimum PEC Conditions Under Resist Heating Effect Reduction for 90nm Node Mask Writing", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467899

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