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28 August 2002 Fabrication of silica-on-silicon waveguide devices by PECVD
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Proceedings Volume 4904, Optical Fiber and Planar Waveguide Technology II; (2002) https://doi.org/10.1117/12.481243
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
Planar lightwave circuits (PLC) utilizing glass related waveguide technologies are nowadays crucial components in optical communication system. In this paper, we present a standardized, silicon dioxide (SiO2) based waveguide structure prepared by plasma enhanced chemical vapor deposition (PECVD) for applications in telecommunication devices, such as wide-band optical power splitter. The index of waveguide layer can be controlled by the N2O:SiH4 ratio and process parameter. High density inductively coupled plasma (ICP) etching system was used to define the waveguide pattern. The fabricated waveguides show satisfactory optical characteristics including low waveguide loss, low chip-to-fiber coupling loss (< 0.5 dB/facet), and low polarization dependence loss (< 0.2 dB).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Song Fure Lin, J. P. Hou, C. H. Chiu, Jing-Yuan Lin, T. C. Chu, D. P. Tsai, and A. K. Chu "Fabrication of silica-on-silicon waveguide devices by PECVD", Proc. SPIE 4904, Optical Fiber and Planar Waveguide Technology II, (28 August 2002); https://doi.org/10.1117/12.481243
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