High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications

Yi Qian; Angela Hohl-AbiChedid; Jin Li; Fan Ye; Fang Yang; Audra Rice; Xiaoyuan Chen; Scot D. Solimine; Rajaram J. Bhat; Martin Hai Hu; Chung-En Zah

doi:10.1117/12.480977

29 August 2002 High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications

Yi Qian, Angela Hohl-AbiChedid, Jin Li, Fan Ye, Fang Yang, Audra Rice, Xiaoyuan Chen, Scot D. Solimine, Rajaram J. Bhat, Martin Hai Hu, Chung-En Zah

Author Affiliations +

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480977
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

This paper reviews recent progress of high-power 14xx-nm pump lasers using AlGaInAs/InP material. This material has superior temperature characteristics to conventional InGaAsP/InP. As a result, it is more suitable for high current and high efficiency operations as well as uncooled applications for the high power 14xx-nm lasers, which are required for advanced optical amplifications. The laser module consists of a laser chip coupled to a fiber lens and mounted on a thermoelectric cooler in a standard butterfly package. The wavelength of the laser can be stabilized with an external fiber Bragg grating (FBG). We have demonstrated a maximum module fiber output power of 550mW at 1.75A and characteristic temperatures of T₀ = 99K and T₁ = 348K over a range of chip heat-sink temperatures from 15°C to 50°C. To the best of our knowledge, these are the highest efficiency and temperature characteristics from a single-mode 14xx-nm semiconductor laser module capable of over 0.5W fiber output power. At a chip heat-sink temperature of 70°C, a power of 360mW was obtained for a laser module with FBG, which is the highest reported to date for any wavelengths from 1300nm to 1600nm and would enable uncooled applications of the 14xx-nm lasers in the future.

Citation Download Citation

Yi Qian, Angela Hohl-AbiChedid, Jin Li, Fan Ye, Fang Yang, Audra Rice, Xiaoyuan Chen, Scot D. Solimine, Rajaram J. Bhat, Martin Hai Hu, and Chung-En Zah "High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480977

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