Low-divergence high-power 980-nm single-mode diode lasers with asymmetric epitaxial structure

Wei Gao; Zuntu Xu; Alan Nelson; Kejian Luo; JunZuo Wan; Haiquan Yang; Lisen Cheng; Aland K. Chin

doi:10.1117/12.480997

29 August 2002 Low-divergence high-power 980-nm single-mode diode lasers with asymmetric epitaxial structure

Wei Gao, Zuntu Xu, Alan Nelson, Kejian Luo, JunZuo Wan, Haiquan Yang, Lisen Cheng, Aland K. Chin

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480997
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

A ridge-waveguide, InGaAs/GaAlAs/GaAs, 980 nm, pump laser-diode emitting more than 600 mW of kink-free power and a FWHM divergence angle less than 22 degrees using an asymmetric-waveguide structure is presented. No catastrophic optical-damage was observed on p-up mounted devices up to a quasi-CW output power of 2 Watts where the power was limited by thermal effects.

Citation Download Citation

Wei Gao, Zuntu Xu, Alan Nelson, Kejian Luo, JunZuo Wan, Haiquan Yang, Lisen Cheng, and Aland K. Chin "Low-divergence high-power 980-nm single-mode diode lasers with asymmetric epitaxial structure", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480997

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