Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple extra-cavity

Feng Wang; Andreas Hermerschmidt; Hans Joachim Eichler

doi:10.1117/12.482217

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5 September 2002 Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple extra-cavity

Feng Wang, Andreas Hermerschmidt, Hans Joachim Eichler

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Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482217
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Using an extra-cavity consisting of an etalon and a mirror, dual-wavelength operation of a high-power broad-area multi-stripe diode laser is achieved. The reflection of the etalon acts as the output of the whole system. The free-running bandwidth of the laser diode is about 2.0 nm. At dual-wavelength operation, the bandwidth of each wavelength component is narrowed to about 0.07 nm, and the space is 1 .65 nm, the same as the FSR of the etalon. We obtain an available dual-wavelength output power of 2.0 W at the drive current of 6.5 A. The power ratio of the components at two different wavelengths can be changed by changing the temperature of the diode laser. To tune the wavelength of the dual-wavelength output, one can changing the temperature of the laser diode and the tilt angle of the etalon simultaneously.

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Feng Wang, Andreas Hermerschmidt, and Hans Joachim Eichler "Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple extra-cavity", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482217

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