Translator Disclaimer
5 September 2002 Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple extra-cavity
Author Affiliations +
Using an extra-cavity consisting of an etalon and a mirror, dual-wavelength operation of a high-power broad-area multi-stripe diode laser is achieved. The reflection of the etalon acts as the output of the whole system. The free-running bandwidth of the laser diode is about 2.0 nm. At dual-wavelength operation, the bandwidth of each wavelength component is narrowed to about 0.07 nm, and the space is 1 .65 nm, the same as the FSR of the etalon. We obtain an available dual-wavelength output power of 2.0 W at the drive current of 6.5 A. The power ratio of the components at two different wavelengths can be changed by changing the temperature of the diode laser. To tune the wavelength of the dual-wavelength output, one can changing the temperature of the laser diode and the tilt angle of the etalon simultaneously.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feng Wang, Andreas Hermerschmidt, and Hans Joachim Eichler "Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple extra-cavity", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002);


Blue-emitting external cavity laser diode
Proceedings of SPIE (April 22 2016)
Advances in high brightness semiconductor lasers
Proceedings of SPIE (February 15 2006)
Study on the collimation of laser diode beams
Proceedings of SPIE (November 19 2007)

Back to Top