Photoelectron characteristics of optical-information-storing material excited by a 35-ps YAG laser

Shaopeng Yang; Guangsheng Fu; Xiaowei Li; Guoyi Dong; Aicong Geng

doi:10.1117/12.481810

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5 September 2002 Photoelectron characteristics of optical-information-storing material excited by a 35-ps YAG laser

Shaopeng Yang, Guangsheng Fu, Xiaowei Li, Guoyi Dong, Aicong Geng

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Proceedings Volume 4914, High-Power Lasers and Applications II; (2002) https://doi.org/10.1117/12.481810
Event: Photonics Asia, 2002, Shanghai, China

Abstract

A YAG super short pulse laser (355nm, 35ps) is used as an exposure source. The electron action in imaging process is directly related to photographic efficiency of silver halide emulsion. Photoelectrons generated under actinic illumination of photographic silver halide systems occur in free, shallow-trapped and deep-trapped states. Different state of electrons has different influence on the dielectric function of silver halide material. The contributions of free and shallow-trapped electrons to the real and the imaginary part of the dielectric function are different by some orders of magnitude. The lifetime of different kinds of electrons can describe these complex processes and the lifetimes of free and shallow-trapped electrons can also reflect the sensitivity and other efficiency of silver halide emulsion. Microwave Absorption and Dielectric Spectrum Detection Technology is a powerful tool that could quickly detect the change of dielectric function of emulsion film. The lifetime and decay curve of the free photoelectrons and shallow trapped electrons of different emulsion samples have been measured and analyzed.

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Shaopeng Yang, Guangsheng Fu, Xiaowei Li, Guoyi Dong, and Aicong Geng "Photoelectron characteristics of optical-information-storing material excited by a 35-ps YAG laser", Proc. SPIE 4914, High-Power Lasers and Applications II, (5 September 2002); https://doi.org/10.1117/12.481810

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