Paper
12 September 2002 Influence of pulse duration and annealing on crystallinity and luminescence of laser-deposited Er-doped YAG (YAP) layers
Miroslav Jelinek, Jiri Oswald, Vaclav Studnicka, Jan Lancok, Martin Pavelka, Agryro Klini, Costas Fotakis
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Abstract
Er- doped YAG and YAP layers were grown by nanosecond (20 ns) and subpicosecond (450 fs) KrF laser ablation under a wide set of deposition conditions. Results of characterization of films crystallinity and luminescence are presented and discussed. Films grown in ns regime were almost amorphous for substrate temperature to Ts ~ 1000 oC, while films grown in subps regime were partly crystalline, even at low Ts. Film crystallinity was also studied after annealing of amorphous layers under vacuum with CO2 and KrF excimer lasers. Luminescence corresponding to Er+3 ions was observed for all samples.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miroslav Jelinek, Jiri Oswald, Vaclav Studnicka, Jan Lancok, Martin Pavelka, Agryro Klini, and Costas Fotakis "Influence of pulse duration and annealing on crystallinity and luminescence of laser-deposited Er-doped YAG (YAP) layers", Proc. SPIE 4915, Lasers in Material Processing and Manufacturing, (12 September 2002); https://doi.org/10.1117/12.482905
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KEYWORDS
Erbium

Luminescence

Crystals

YAG lasers

Annealing

Gas lasers

Er:YAG lasers

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