Maskless patterning characteristics of vanadium pentoxide amorphous films by frequency-doubled Q-seitched Nd:YAG laser irradiation

Moriaki Wakaki; Ryuzaburo Nakao; Hironobu Sakata; Takehisa Shibuya; Akira Yoshikado

doi:10.1117/12.482906

12 September 2002 Maskless patterning characteristics of vanadium pentoxide amorphous films by frequency-doubled Q-seitched Nd:YAG laser irradiation

Moriaki Wakaki, Ryuzaburo Nakao, Hironobu Sakata, Takehisa Shibuya, Akira Yoshikado

Author Affiliations +

Proceedings Volume 4915, Lasers in Material Processing and Manufacturing; (2002) https://doi.org/10.1117/12.482906
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Patterning of vanadium pentoxide (V2O5) visible light absorbing amorphous films was attempted using a SHG beam (? =532nm) of Q-switched Nd:YAG laser. Amorphous V205 films (350nm thick) were deposited on an optical glass slide substrate 1.4mm thick by normal resistance-heating vacuum evaporation. A sheet beam ofthe pulse laser with an output power of 1 .4J/pulse was used, having a pulse width of iOns, and a calculated laser fluence of 46. 1J/cm2. The beam with pulse repetition of 10Hz was irradiated in air at room-temperature on the film sample that moved to the direction normal to that of the sheet beam with a speed of 5mm/s. Both direct and indirect beam irradiation through the glass substrate produced a regular stripe pattern due to film removal. Characterization of removed and non-removed film portions in a laser track reveals a molecular and/or nanocluster sublimation of amorphous V2o5 caused by laser irradiation. This patterning has an advantage of short-time film processing.

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Moriaki Wakaki, Ryuzaburo Nakao, Hironobu Sakata, Takehisa Shibuya, and Akira Yoshikado "Maskless patterning characteristics of vanadium pentoxide amorphous films by frequency-doubled Q-seitched Nd:YAG laser irradiation", Proc. SPIE 4915, Lasers in Material Processing and Manufacturing, (12 September 2002); https://doi.org/10.1117/12.482906

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