Characteristics of n-GaN after ICP etching

Yanjun Han; Song Xue; Wenping Guo; Zhi-Biao Hao; Changzheng Sun; Yi Luo

doi:10.1117/12.483055

17 September 2002 Characteristics of n-GaN after ICP etching

Yanjun Han, Song Xue, Wenping Guo, Zhi-Biao Hao, Changzheng Sun, Yi Luo

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483055
Event: Photonics Asia, 2002, Shanghai, China

Abstract

In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the I-V characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.

Citation Download Citation

Yanjun Han, Song Xue, Wenping Guo, Zhi-Biao Hao, Changzheng Sun, and Yi Luo "Characteristics of n-GaN after ICP etching", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483055

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