Numerical simulation study on Cz growth of silicon single crystal in a magnetic field

Jinghe Liu; Jing Sun; Zhongli Zhu; Ying Cao; Ling Liu; Yingwei Wang

doi:10.1117/12.483096

17 September 2002 Numerical simulation study on Cz growth of silicon single crystal in a magnetic field

Jinghe Liu, Jing Sun, Zhongli Zhu, Ying Cao, Ling Liu, Yingwei Wang

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483096
Event: Photonics Asia, 2002, Shanghai, China

Abstract

In this paper, Cz growth of silicon single crystal in a magnetic field was studied with numerical simulation method. The results of numerical simulation showed that convection of melt could be controlled when the magnetic field was added, moreover, forced convection was controlled much larger than natural convection. The oxygen concentration of the interface would decrease with the strengthening of the magnetic field intensity, but the temperature field of the melt did not change with the strenghtening of the magnetic field.

Citation Download Citation

Jinghe Liu, Jing Sun, Zhongli Zhu, Ying Cao, Ling Liu, and Yingwei Wang "Numerical simulation study on Cz growth of silicon single crystal in a magnetic field", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483096

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