Optical characterization of Al2O3 films doped with transition elements at various concentrations

Hiroshi Murotani; Moriaki Wakaki; Daisuke Mochida

doi:10.1117/12.483081

17 September 2002 Optical characterization of Al₂O₃ films doped with transition elements at various concentrations

Hiroshi Murotani, Moriaki Wakaki, Daisuke Mochida

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483081
Event: Photonics Asia, 2002, Shanghai, China

Abstract

It is required for the optical amplifier to make down sizing and also to have high efficiency to meet the demands for processing higher density of information. Especially, the film-type optical amplifier is advantageous in the field of the optical integrated circuit. From such a point, we are studying the potential materials for a waveguide-type optical amplifier with higher efficiency. The Al2O3 is possible to deposit by the vacuum deposition method using an electron beam which is excellent about the mass production. In this study, we examined about the Al₂O₃ film system as a matrix medium doped with transition elements of Cr or Co as optically active elements. These films doped with transition elements at various concentrations were characterized using absorption spectroscopy and photoluminescence (PL) et al for their optical and electrical properties. As a result, optically active films were deposited by optimizing the electron beam vacuum deposition condition. It was found that the property of the film changed from an insulator-like to a metal-like behavior at the doping rate of around 30at. percent due to the precipitation of the metallic phase of doped transition elements.

Citation Download Citation

Hiroshi Murotani, Moriaki Wakaki, and Daisuke Mochida "Optical characterization of Al₂O₃ films doped with transition elements at various concentrations", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483081

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