Valance intersubband laser with strain-symmetrized silicon-based Si-Ge superlattice

Yanwu Lu; Can Lu; Gregory Sun

doi:10.1117/12.483098

17 September 2002 Valance intersubband laser with strain-symmetrized silicon-based Si-Ge superlattice

Yanwu Lu, Can Lu, Gregory Sun

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483098
Event: Photonics Asia, 2002, Shanghai, China

Abstract

This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattice grown on a relaxed Si_1-xGe_xbuffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of strain-symmetrized silicon/germanium superlattices within 4×4 Luttinger model. The valence band offsets and strain parameters are calculated by Van de Walle's model-solid theory. Analysis of the in-plane energy dispersion shows that the light-hole effective mass is inverted in the k-space region. The laser structure can be desigend with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands in local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved wiht a pumping current density 10KA/cm².

Citation Download Citation

Yanwu Lu, Can Lu, and Gregory Sun "Valance intersubband laser with strain-symmetrized silicon-based Si-Ge superlattice", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483098

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