Fabrication and characterization of c-axis-oriented transparent conductive nanocrystalline AZO thin films by rf magnetron sputtering

Guojia Fang; Dejie Li; Bao-Lun Yao

doi:10.1117/12.471878

20 September 2002 Fabrication and characterization of c-axis-oriented transparent conductive nanocrystalline AZO thin films by rf magnetron sputtering

Guojia Fang, Dejie Li, Bao-Lun Yao

Author Affiliations +

Proceedings Volume 4919, Advanced Materials and Devices for Sensing and Imaging; (2002) https://doi.org/10.1117/12.471878
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Using high density ZnO:Al₂O₃ (AZO) target (94%) and without introducing any reaction oxygen, (001)-oriented transparent conductive AZO thin films are prepared by rf planar magnetron sputtering deposition on soda-lime glass. The structural, electrical and optical properties of the films deposited and annealed at different conditions are characterized with various techniques. The as-deposited and post-deposition annealed thin films have highly c-axis-orientated growth with hexagonal structure. Samples deposited at below 360°C are very smooth with spherical grains about tens nano-meters, the crystallization has been improved with vacuum annealing. The experimental results show that AZO thin films with optical transmittance of above 85% at wavelength of 550 nm and electrical resistivity of 10^-4 Ωcm order were achieved by deposition at substrate temperature of 360°C and subsequently annealed at 450°C for 2 h in vacuum pressure of 10^-5 Torr. With increase of the deposition temperature or post-deposition annealing in vacuum, the carrier concentration of AZO thin film increases, and the absorption edge in transmission spectra shifts toward the shorter wavelength side (blue shift).

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Guojia Fang, Dejie Li, and Bao-Lun Yao "Fabrication and characterization of c-axis-oriented transparent conductive nanocrystalline AZO thin films by rf magnetron sputtering", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.471878

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