Design and simulation of integrated CMOS-compatible capacitive absolute pressure-sensing microsystems

Minxin Zhou; Qing-An Huang; Ming Qin

doi:10.1117/12.483160

10 September 2002 Design and simulation of integrated CMOS-compatible capacitive absolute pressure-sensing microsystems

Minxin Zhou, Qing-An Huang, Ming Qin

Proceedings Volume 4928, MEMS/MOEMS Technologies and Applications; (2002) https://doi.org/10.1117/12.483160
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Transducers, as the interface between the environment and circuits inside the systems, have been developed to be core elements of Micro-Electro-Mechanic System ( MEMS ) or microsystems. Integration of the transducer and the signal process circuit on a chip using the same technology has been the bottleneck of microsystems design. A new method of pressure-sensing microsystem has been proposed in this paper. The sensor consists of a capacitive structure fabricated by 2-layer polysilicon CMOS IC technology and a detection integrated circuit on the same chip. Front-end processing is unnecessary and only back-end processing with several photolithography steps is utilized to achieve the micromachined structure after the integrated circuit part is completed. The entire system converts absolute pressure changes, in the pressure range useful for barometric applications, from 0.5 bar to 1.5bar with the temperature between -25°C and 60°C, to frequency changes. The microsystem is designed using the standard software tools such as ANSYSTM and H-SPICE. The simulation show that the microsystem would be achieved with high performance. A sensitivity of 1Hz/4fF could be achieved.

Citation Download Citation

Minxin Zhou, Qing-An Huang, and Ming Qin "Design and simulation of integrated CMOS-compatible capacitive absolute pressure-sensing microsystems", Proc. SPIE 4928, MEMS/MOEMS Technologies and Applications, (10 September 2002); https://doi.org/10.1117/12.483160

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