Ge-doped film process in waveguide application

Nick Singh; Sean Weng Kong Lee; Chris Hodson; Andy Goodyear; Gary A. Ditmer; Mike Cooke

doi:10.1117/12.483242

16 September 2002 Ge-doped film process in waveguide application

Nick Singh, Sean Weng Kong Lee, Chris Hodson, Andy Goodyear, Gary A. Ditmer, Mike Cooke

Proceedings Volume 4929, Optical Information Processing Technology; (2002) https://doi.org/10.1117/12.483242
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Plasma Enhanced Chemical Vapour Deposition (PECVD) was used in the development of silica layers for use in planar waveguide applications. The addition of GeH4 to silica was used to control the refractive index of core layers with index differences core-clad in the range of 0.2%-1.3%. High rate SiO2 and Ge-doped SiO2 films have been deposited on to 4” Si <100> wafers. The ‘as deposited’ and ‘annealed’ film properties have been compared, including film uniformity, RI, RI uniformity and stress have been compared. Ge-doped SiO2 films up to 10 um thickness have been deposited and annealed for the above study. Refractive index uniformity of ± 0.0002 was achieved after annealing for 4” silicon wafers. The core layers were shown to be capable of producing optical losses of <0.1dB/cm when incorporated into a typical waveguide design.

Citation Download Citation

Nick Singh, Sean Weng Kong Lee, Chris Hodson, Andy Goodyear, Gary A. Ditmer, and Mike Cooke "Ge-doped film process in waveguide application", Proc. SPIE 4929, Optical Information Processing Technology, (16 September 2002); https://doi.org/10.1117/12.483242

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