Paper
13 November 2002 Ba(Mg1/3Ta2/3)O3 substrate for BaxSr1-xTiO3 thin film used for phase shifter
Chunlin Fu, Hongwei Chen, Chungen Huang, Jiang Hu, Wencheng Hu, Wenyuan Li, Chuanren Yang
Author Affiliations +
Proceedings Volume 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems; (2002) https://doi.org/10.1117/12.469680
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia
Abstract
Barium strontium titanate, BaxSr1-xTiO3 (BST for short), thin films are grown on the substrates of barium magnesium tantalite, Ba(Mg1/3Ta2/3)O3 (BMT for short), by pulsed laser deposition (PLD) technique. The microstructures and electric properties of Ba(Mg1/3Ta2/3)O3 ceramics and BaxSr1-xTiO3 films are investigated, and the phase shifter is fabricated. Both Ba(Mg1/3Ta2/3)O3 and BaxSr1-xTiO3 have perovskite structure and BMT ceramics has high Q0 at microwave frequency , so BMT substrate is compatible and suitable for BST films. The dielectric constant and dielectric loss of the BST films are 510 and 2% respectively , and about 50% dielectric constant tunability is achieved with an electric field bias of 3v/μm. The dielectric loss of BST films shows no obvious change with the electric fields. About 50° of phase shift has obtained with an electric field bias of 2v/μm at 5GHz .
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chunlin Fu, Hongwei Chen, Chungen Huang, Jiang Hu, Wencheng Hu, Wenyuan Li, and Chuanren Yang "Ba(Mg1/3Ta2/3)O3 substrate for BaxSr1-xTiO3 thin film used for phase shifter", Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); https://doi.org/10.1117/12.469680
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KEYWORDS
Dielectrics

Barium

Thin films

Strontium

Tantalum

Phase shifts

Ceramics

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