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15 April 2003 1300-nm GaAs-based vertical-cavity lasers
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Proceedings Volume 4942, VCSELs and Optical Interconnects; (2003)
Event: Photonics Fabrication Europe, 2002, Bruges, Belgium
We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small fraction of N, the luminescence efficiency degrades strongly with wavelength. On the other hand, using highly strained InGaAs QWs in combination with a large VCL detuning it is also possible to push the emission wavelength towards 1.3 μm. The optimized MOVPE growth conditions for such QW and VCL structures are discussed in some detail. It is noted that GaInNAs and InGaAs QWs preferably are grown at low temperature, but with quite different V/III ratios and growth rates. We also point out the importance of reduced doping concentration and growth temperature of the n-doped bottom DBR to minimize optical loss and for compatibility with GaInNAs QWs. InGaAs VCLs with emission wavelength beyond 1260 nm is demonstrated. This includes mW-range output power, mA-range threshold current and 10 Gb/s data transmission.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mattias Hammar, Carl Asplund, Petrus Sundgren, Sebastian Mogg, Ulf Christiansson, Thomas Aggerstam, Vilhelm Oscarsson, Christine Runnstroem, Elsy Oedling, and Jessica Malmquist "1300-nm GaAs-based vertical-cavity lasers", Proc. SPIE 4942, VCSELs and Optical Interconnects, (15 April 2003);


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