Semiconductor laser crystallization of a-Si:H

B. K. Nayak; J. McLeskey; A. Selvan; B. Eaton; Mool C. Gupta; R. Romero; G. Ganguly

doi:10.1117/12.479573

17 October 2003 Semiconductor laser crystallization of a-Si:H

B. K. Nayak, J. McLeskey, A. Selvan, B. Eaton, Mool C. Gupta, R. Romero, G. Ganguly

Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003) https://doi.org/10.1117/12.479573
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States

Abstract

Results of semiconductor laser crystallization of a-Si:H on transparent conducting fluoride doped tin oxide coated glass are discussed. A-Si:H films were prepared by plasma enhanced chemical vapor deposition. Laser crystallized films of a-Si:H were characterized by X-ray diffraction and optical microscopy. Semiconductor laser crystallization process as compared to well-established excimer laser offers low cost large area technology for solar cell, display and other applications. Longer wavelength of diode lasers (805 nm) allows light to penetrate deeper in the films for crystallization of thicker films required for enhanced light absorption.

Citation Download Citation

B. K. Nayak, J. McLeskey, A. Selvan, B. Eaton, Mool C. Gupta, R. Romero, and G. Ganguly "Semiconductor laser crystallization of a-Si:H", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); https://doi.org/10.1117/12.479573

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