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15 January 2003 Direct thin-film imaging, DTFI, based on PMOD (photochemical metal-organic deposition) methodology
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Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003)
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Considerable difficulties and limitations are associated with the patterning of thick photoresist layers to generate high aspect ratio features in MEMS fabrication. Moreover, a large number of steps is needed to achieve the patterned MEMS structures. The PMOD methodology takes advantage of direct patterning of a photoimageable, highly etch resistant inorganic metal oxide precursor to form the hard mask. A spin coated thin TiO2 film deposited onto a Novolac transfer layer has been evaluated. An etch ratio of 850:1 between Novolac resin and TiO2 thin-film has been achieved by oxygen gas RIE. One set of process parameters demonstrated vertical sidewalls on 10 m thick Novolac using a 20 nm patterned TiO2 thin-film. Photo resolution of the TiO2 films as small as 0.5 m has been demonstrated using a contact aligner. In addition to applying our process to silicon substrates, we have also demonstrated the feasibility of patterning on ceramic alumina substrates. The plasma-etch residues and the PMOD film were removed by wet chemical cleaning solutions developed at EKC Technology.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harold O. Madsen, Seigi Suh, Leo G. Svendsen, Shyama P. Mukherjee, Paul J. Roman Jr., Michael A. Fury, and Katy Ip "Direct thin-film imaging, DTFI, based on PMOD (photochemical metal-organic deposition) methodology", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003);


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