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15 January 2003 High resolution x-ray masks for high aspect ratio microelectromechanical systems (HARMS)
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Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003)
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
X-ray lithography is commonly used to build high aspect ratio microstructures (HARMS) in a 1:1 proximity printing process. HARMS fabrication requires high energy X-rays to pattern thick resist layers; therefore the absorber thickness of the working X-ray mask needs to be 10-50 μm in order to provide high contrast. To realize high resolution working X ray masks, it is necessary to use intermediate X-ray masks which have been fabricated using e beam or laser lithographic techniques. The intermediate masks are characterized by submicron resolution critical dimensions (CD) but comparatively lower structural heights (~2 μm). This paper mainly focuses on the fabrication of high resolution X-ray intermediate masks. A three-step approach is used to build the high resolution X-ray masks. First, a so called initial mask with sub-micron absorber thickness is fabricated on a 1 μm thick silicon nitride membrane using a 50KeV e beam writer and gold electroplating. The initial X-ray mask has a gold thickness of 0.56 μm and a maximum aspect ratio of 4:1. Soft X-ray lithography and gold electroplating processes are used to copy the initial mask to form an intermediate mask with 1 μm of gold. The intermediate mask can be used to fabricate a working X-ray mask by following a similar set of procedures outlined above.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lin Wang, Flavio Aristone, Jost Goettert, Jong Ren Kong, Keith Bradshaw, Todd R. Christenson, Yohannes M. Desta, and Yoonyoung Jin "High resolution x-ray masks for high aspect ratio microelectromechanical systems (HARMS)", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003);

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