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15 January 2003 SU-8 based deep x-ray lithography/LIGA
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Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003)
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Poly-methylmethacrylate (PMMA), a positive resist, is the most commonly used resist for deep X-ray lithography (DXRL)/LIGA technology. Although PMMA offers superior quality with respect to accuracy and sidewall roughness but it is also extremely insensitive. In this paper, we present our research results on SU-8 as negative resist for deep X-ray lithography. The results show that SU-8 is over two order of magnitude more sensitive to X-ray radiation than PMMA and the accuracy of the SU-8 microstructures fabricated by deep X-ray lithography is superior to UV-lithography and comparable to PMMA structures. The good pattern quality together with the high sensitivity offers rapid prototyping and direct LIGA capability. Moreover, the combinational use of UV and X-ray lithography as well as the use of positive and negative resists made it possible to fabricate complex multi-level 3D microstructures. The new process can be used to fabricate complex multi-level 3D structures for MEMS, MOEMS, Bio-MEMS or other micro-devices.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linke Jian, Yohannes M. Desta, Jost Goettert, Martin Bednarzik, Bernd Loechel, Yoonyoung Jin, Georg Aigeldinger, Varshni Singh, Gisela Ahrens, Gabi Gruetzner, Ralf Ruhmann, and Reinhard Degen "SU-8 based deep x-ray lithography/LIGA", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003);


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