Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells

Di-Ku Yu; Gagik Sh. Shmavonyan; Yi-Shin Su; Ching-Fuh Lin

doi:10.1117/12.474385

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25 July 2003 Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells

Di-Ku Yu, Gagik Sh. Shmavonyan, Yi-Shin Su, Ching-Fuh Lin

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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474385
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Novel bi-directional propagation is observed in a shallow-etched bending ridge waveguide. The lasing light propagates in two different paths, straight way and bending way. The far-field pattern is quite different before and after the lasing condition is reached. Emission spectra of light emitted from two facets are also different. This is because the bidirectional guided effect of lasing mode occurs.

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Di-Ku Yu, Gagik Sh. Shmavonyan, Yi-Shin Su, and Ching-Fuh Lin "Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474385

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