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25 July 2003 Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.478321
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Woon-Kyung Choi, Doo-Gun Kim, Young-Wan Choi, Seok Lee, Deokha Woo, Young Tae Byun, Jae Hun Kim, and Sun-Ho Kim "Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.478321
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