Paper
19 June 2003 Third order nonlinearity in SnO2:SiO2 wide-band-gap semiconductor-doped glasses
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Abstract
Wide-band-gap semiconductor-doped-glasses were obtained by synthesizing SnO2:SiO2 nanostructured glassceramics. In this binary system, comprising two chemically compatible oxides, crystalline SnO2 nanoclusters were embedded in a pure silica matrix in a controlled way, by setting appropriate thermochemical parameters, up to 10% of volume fraction of the semiconductor crystalline phase. Measurements of third order non-linearity were carried out by means of z-scan technique at 1064 nm finding a non linear refractive index comparable with that of glasses doped with Cd chalcogenides. Optical spectroscopy, micro-Raman scattering and electron microscopy indicated good optical and nano-structural features, suitable for stable optical applications, both in bulk and film samples.
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Alberto Paleari, Norberto Chiodini, and Giorgio Spinolo "Third order nonlinearity in SnO2:SiO2 wide-band-gap semiconductor-doped glasses", Proc. SPIE 4987, Integrated Optics: Devices, Materials, and Technologies VII, (19 June 2003); https://doi.org/10.1117/12.474354
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KEYWORDS
Absorption

Crystals

Silica

Glasses

Tin

Semiconductors

Nonlinear optics

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