We report on photoluminescence (PL) properties of ZnO epitaxial films and single-crystal nanorods grown by low pressure metalorganic vapor phase epitaxy. Time-integrated PL spectra of the films at 10 K clearly exhibited free A and B excitons at 3.376 and 3.382 eV and bound exciton peaks at 3.360, 3.364, and 3.367 eV. With increasing temperature, intensities of the bound exciton peaks drastically decreased and a free exciton peak was dominant above 40 K. Similarly, vertically well-aligned ZnO nanorod arrays also exhibited free exciton peaks at 3.374 and 3.381 eV, which indicates that ZnO nanorods prepared by the catalyst-fee method are of high optical quality. Furthermore, time-resolved PL measurements at a free exciton peak were carried out at room temperature. The decay profiles were of double-exponential form, and the decay time constants of 180 ps and 1.0 ns were obtained using a least-square fit of the data. Excitation power-dependent PL of ZnO epilayers is also discussed.
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