Paper
30 May 2003 Role of the carrier-envelope phase in extreme nonlinear optics in ZnO
Torsten Tritschler, Oliver D. Muecke, Uwe Morgner, Franz X. Kaertner, Martin Wegener
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Abstract
We discuss the dependence of nonlinear optical signals on the carrier-envelope offset phase, i.e., the phase between the rapidly oscillating carrier wave and the electric field envelope of a few-cycle pulse. Our results in the regime on non-perturbative resonant nonlinear optics are compared with the know off-resonant perturbative regime. In particular, we introduce camouflage third-harmonic generation, which shows up as a peak at twice the carrier-envelope offset frequency in the radio-frequency spectra. Corresponding experiments on ZnO with intense 5 fs optical pulses are discussed. We speculate on the perspectives of using such effects for determining the carrier-envelope offset phase itself.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Torsten Tritschler, Oliver D. Muecke, Uwe Morgner, Franz X. Kaertner, and Martin Wegener "Role of the carrier-envelope phase in extreme nonlinear optics in ZnO", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.473250
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Cited by 4 scholarly publications.
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KEYWORDS
Zinc oxide

Nonlinear optics

Camouflage

Second-harmonic generation

Semiconductors

Polarization

Mode locking

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