Paper
19 June 2003 Analysis of heat flows and their impact on the reliability of high-power diode lasers
Jens Wolfgang Tomm, Franz Rinner, Joseph Rogg, E. Thamm, Christian Ribbat, Roman Sellin, Dieter Bimberg
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Abstract
Facet overheating is considered a potential source for device degradation of diode lasers. We test two different concepts for the reduction of facet temperatures of high-power diode lasers by measuring the facet temperatures by means of Raman spectroscopy. For conventional high-power broad area lasers we demonstrate the reduction of the facet overheating by the introduction of current blocking layers by a factor of 3-4. For another set of devices among them quantum well and quantum-dot lasers with almost the same device design we find a reduction of the overheating by 40 to 60 percent for the dot devices. Thus we qualify two very different but promising technological approaches for increasing device reliability.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Wolfgang Tomm, Franz Rinner, Joseph Rogg, E. Thamm, Christian Ribbat, Roman Sellin, and Dieter Bimberg "Analysis of heat flows and their impact on the reliability of high-power diode lasers", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); https://doi.org/10.1117/12.473277
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CITATIONS
Cited by 10 scholarly publications.
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KEYWORDS
Semiconductor lasers

High power lasers

Temperature metrology

Quantum wells

Pulsed laser operation

Continuous wave operation

Raman spectroscopy

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