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19 June 2003 Neutron transmutation doped far-infrared p-Ge laser
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Proceedings Volume 4993, High-Power Fiber and Semiconductor Lasers; (2003)
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Far-infrared p-Ge laser operation in an active crystal prepared by transmutation doping is demonstrated for the first time. Though saturated current density in the prepared active crystal is twice lower than optimal, the laser performance is comparable to that of good lasers made from commercially produced melt grown p-Ge. The current saturation behavior of this material confirms the expected higher doping uniformity over melt grown laser rods.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric W. Nelson, Elena S. Flitsiyan, Andrei V. Muravjov, Maxim V. Dolguikh, Robert E. Peale, Steven H. Kleckley, William G. Vernetson, and V. Z. Tsipin "Neutron transmutation doped far-infrared p-Ge laser", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003);

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