GaInNAsSb long-wavelength lasers on GaAs

James S. Harris Jr.

doi:10.1117/12.480184

3 July 2003 GaInNAsSb long-wavelength lasers on GaAs

James S. Harris Jr.

Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003) https://doi.org/10.1117/12.480184
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Dilute nitride GaInNAs alloys grown on GaAs have quickly become excellent candidate materials for lower cost 1.3μm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers. Despite the relative immaturity and challenges of this new materials system the results have been very promising. The major remaining challenges include the limited solubility of nitrogen in GaAs, non-radiative defects that may be caused by nitrogen incorporation, and phase segregation at high In compositions. A new component, Sb, has been added in order to improve epitaxial growth and optical properties at wavelengths longer than 1.3μm. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3-1.6μm where normally poor quality material results. Lasers fabricated from this new pentenary alloy have produced the lowest threshold lasers operating beyond 1.4μm on GaAs. Progress and the remaining challenges of this materials system are described.

Citation Download Citation

James S. Harris Jr. "GaInNAsSb long-wavelength lasers on GaAs", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); https://doi.org/10.1117/12.480184

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