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3 July 2003 GaN-based laser diodes emitting from ultraviolet to blue-green
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Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003)
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
GaN-based laser diodes (LDs), which emit from UV to blue-green, are reviewed. For fabricating the UV LDs, we used the AlInGaN active layer instead of InGaN one. We demonstrated the UV LDs with a lasing wavelength 368nm under continuous-wave (cw) operation. Moreover, we fabricated the blue-green LDs whose lasing wavelength was 480 nm. It was investigated that the relationship between the threshold current density and the lasing wavelength. From our experiments, we successfully expanded the range of GaN-based LDs lasing wavelength, from UV (368 nm) to blue-green (480 nm). Regarding high power 405 nm-LDs, we could demonstrate the cw operated LD array devices with an output power of 1W by decreasing the thermal resistance of the LD chips.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Daisuke Morita, Osamu Miki, Keiji Sakamoto, Masashi Yamamoto, Yuuji Matsuyama, Yasuhiro Kawata, Takashi Murayama, and Takashi Mukai "GaN-based laser diodes emitting from ultraviolet to blue-green", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003);


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