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3 July 2003 AlGaInP light-emitting diodes with omnidirectionally reflecting submount
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.479770
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
A novel AlGaInP light-emitting diode (LED) is presented that employs high-reflectivity omni-directional reflector (ODR) submounts. It is shown that the reflective-submount (RS) LED has a higher light-extraction efficiency than conventional LEDs. Red AlGaInP RS-LEDs bonded to Si-substrates are demonstrated using a silver-based ODR. The ODR is perforated by an array of small-area low-resistance ohmic contacts. The optical and electrical characteristics of the RS-LEDs are presented and compared to conventional AlGaInP absorbing substrates (AS) LEDs with distributed Bragg reflectors (DBR). It is shown that the light output from the RS-LED exceeds that of AS-LEDs by about a factor of two.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Gessmann, E. Fred Schubert, John W. Graff, and Klaus P. Streubel "AlGaInP light-emitting diodes with omnidirectionally reflecting submount", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.479770
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