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3 July 2003 Ultraviolet nitride LED fabrication for high-flux white LED
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003)
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
The requirements for maximizing the external quantum efficiency of UV nitride LEDs are discussed. It is shown that as the chip wavelength progressively decreases, nitride epi growth on a sapphire substrate becomes advantageous in terms of light extraction. The epilayer requirements for UV LEDs dictate the growth of n-AlGaN, with increasing Al contents, and the growth of UV-transparent p-GaN. It is shown that MOCVD growth in a Emcore D-180 or Ganzilla reactor is ideal for meeting the stringent epilayer requirements. Increasing light extraction efficiency and wall-plug efficiency also requires optimization of the reflecting P-contact. The relative merits of Al- and Ag-based reflecting contacts are discussed. Performance data for UV LEDs on sapphire, for drive currents up to 700 mA is shown. Finally, a practical high power UV-based white lamp is demonstrated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hari S. Venugopalan, Anthony DiCarlo, Xiang Gao, Sebastien Libon, Bryan S. Shelton, Emil Stefanov, Tingting Zhang, Ivan Eliashevich, Stan E. Weaver, Michael Hsing, Boris Kolodin, Tom Soules, Doru Florescu, Shiping Guo, Milan Pophristic, and Boris Peres "Ultraviolet nitride LED fabrication for high-flux white LED", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003);


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