Translator Disclaimer
9 July 2003 Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers
Author Affiliations +
Proceedings Volume 4998, Photonic Integrated Systems; (2003)
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
The Sampled-Grating Distributed-Bragg-Reflector laser(SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network reconfigurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple bandgaps along the device structure. These epitaxial "platforms" provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated electro-absorption modulators.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathon S. Barton, Erik J. Skogen, Milan L. Masanovic, James Raring, Matt N. Sysak, Leif Johansson, Steven P. DenBaars, and Larry A. Coldren "Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers", Proc. SPIE 4998, Photonic Integrated Systems, (9 July 2003);

Back to Top