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1 July 2003 Modeling of the capture and thermal escape of the carriers from InAs quantum dots at different temperatures
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.485706
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
A theoretical model for the dependence on temperature of the carrier behavior in a semiconductor structure containing InAs quantum dots grown inside a Ga0.85In0.15As quantum well is presented. The conditions, that have to be imposed in order to obtain analytical solutions with obvious physical interpretation are kept to minimum. Two temperature domains are approached in this model. In the low temperature case the equation system that describes the carrier behavior can be reduced to a cubic equation. One of the solutions of the equation represents the quantum dot photoluminescence yield. Also, a solution is obtained for the dot emission yield in the high temperature domain, where the carrier thermal escape from dots cannot be neglected. The solution depends, on the probabilities for electron and hole capture and reemission, and on the number of dot states occupied by electrons and holes. Temperature dependent measurements of the quantum dot photoluminescence are performed and the results are fit with the theoretical model.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan Paul Popescu, Petr Georgievich Eliseev, Andreas Stintz, and Kevin J. Malloy "Modeling of the capture and thermal escape of the carriers from InAs quantum dots at different temperatures", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.485706
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