New III-V-based magnetic semiconductors and their optical and magnetic properties

Hajime Asahi; Y. K. Zhou; Mamoru Hashimoto; R. Asano; Hiroyuki Tanaka

doi:10.1117/12.482476

1 July 2003 New III-V-based magnetic semiconductors and their optical and magnetic properties

Hajime Asahi, Y. K. Zhou, Mamoru Hashimoto, R. Asano, Hiroyuki Tanaka

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.482476
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

II-V-based magnetic semiconductors are gathering great interest because of their potential utility as new functional materials that are expected to lead to the introduction of spin degree-of-freedom for semiconductor devices. New magnetic semiconductor heterostructure, InMnAsSb/InSb, was proposed and grown by low temperature molecular beam epitaxy (MBE). Mid-infrared (2-6 μm) light-induced ferromagnetism was observed at temperatures lower than 40-50K and this light-induced magnetization remained even after the stop of light irradiation. Observed characteristics are applicable to the mid-infrared sensor/memory devices. New magnetic semiconductor GaCrN layers were grown by electron-cyclotron-resonance (ECR) plasma-assisted MBE and the ferromagnetic characteristics were observed at 7-400K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field (M-H) curves at all measuring temperatures. We also observed the photoluminescence (PL) emission from GaCrN layers. Applications to the novel devices controlling charges (electrons and holes), spins and photons are expected.

Citation Download Citation

Hajime Asahi, Y. K. Zhou, Mamoru Hashimoto, R. Asano, and Hiroyuki Tanaka "New III-V-based magnetic semiconductors and their optical and magnetic properties", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.482476

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