Quantum 1/f optimization of quantum sensing in spintronic, electro-optic, and nanodevices

Peter H. Handel

doi:10.1117/12.501204

1 July 2003 Quantum 1/f optimization of quantum sensing in spintronic, electro-optic, and nanodevices

Peter H. Handel

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.501204
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Most quantum sensing is limited by fundamental 1/f noise, and is described by the author’s quantum 1/f noise theory. The present review paper summarizes this new aspect of quantum mechanics and displays its applications in spin valves and related devices, in the classical forms of infrared detectors, and in various other nanodevices, such as MEMs. In spintronic devices, the quantum 1/f effect causes macroscopic quantum fluctuations of the electronic spin flip rate. They translate into 1/f noise in the leakage current, given by the conventional quantum 1/f formula. In infrared detectors, the dark current exhibits similar quantum 1/f fluctuations that are present in the elementary cross sections and process rates that limit and determine the dark current. In n⁺-p junction infrared detectors, for instance, at low temperatures, these are mainly the recombination cross sections present in the space charge region and on the surface in the junction region. At higher temperatures, they are mainly the scattering cross sections in the diffusion tail in the p region. Conventional quantum 1/f effect in these scattering cross sections will be noticed as mobility fluctuations, and therefore also as 1/f fluctuations in the diffusion constant, causing again 1/f noise in the dark current.

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Peter H. Handel "Quantum 1/f optimization of quantum sensing in spintronic, electro-optic, and nanodevices", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.501204

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