Small Au/SAM/Au junctions by EB lithography

Yasuyuki Miyamoto; Kazuki Sasao; Yasuo Azuma; Naotaka Kaneda; Yutaka Majima

doi:10.1117/12.479602

1 July 2003 Small Au/SAM/Au junctions by EB lithography

Yasuyuki Miyamoto, Kazuki Sasao, Yasuo Azuma, Naotaka Kaneda, Yutaka Majima

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479602
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

A self-assembled monolayer (SAM) molecule is attractive as an active region of an electron device because of its inherent small thickness (~1-2 nm) between each electrode. We reported processes to fabricate small Au/SAM/Au junctions by using electron beam lithography. As a SAM molecule, we used benzene-1,4-dithiol on Au. To obtain an atomically flat Au electrode without deformation of shape, lower deposition rate, lower sample temperature, and adequate annealing temperature were required. By using a SiO₂ pattern as a shadow mask, twice oblique evaporations made small Au/SAM/Au junctions. A minimum feature size of slit of a SiO₂ pattern was 160 nm by using electron beam lithography. Si substrate isolated by SiO₂ works as a gate electrode of three terminal devices by the Au/SAM/Au junctions. Observed current-voltage characteristics between the drain and the source showed nonlinear characteristics and weak modulation by gate bias was observed. The processes to improve device characteristics are also discussed.

Citation Download Citation

Yasuyuki Miyamoto, Kazuki Sasao, Yasuo Azuma, Naotaka Kaneda, and Yutaka Majima "Small Au/SAM/Au junctions by EB lithography", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.479602

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