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16 May 2003 Method to extend dynamic range of CMOS image sensor using different frame-rate read out
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In this article, we propose a method to extend the dynamic range of the CMOS image sensor to both high illumination and low illumination. A one-frame period is divided into a period of long accumulation for low illumination, and periods of short accumulation for high illumination. The sensor data accumulated for short time are read out several times, and all of data are added repeatedly in a processing unit integrated. The SNR dip at boundary of low illumination and high illumination regions is reduced by the integration of the short accumulated signals. Because the proposed method is independent of the type of pixel structure, the low-noise characteristics can be achieved, allowing to use, for example, 4-transistor APS with a pinned photo diode. If the ratio of the long accumulation time and the short accumulation time is 128 and the number of addition times is 8, the dynamic range is extended to 41.6dB and the SNR dip is -11 dB.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaaki Sasaki, Shoji Kawahito, Mitsuhito Mase, and Yoshiaki Tadokoro "Method to extend dynamic range of CMOS image sensor using different frame-rate read out", Proc. SPIE 5017, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV, (16 May 2003);


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