Er-doped SiO2 with silicon nanocrystals as a new active optical medium

Irina N. Yassievich; Mikhail S. Bresler; Oleg B. Gusev; A. S. Moskalenko

doi:10.1117/12.514386

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11 June 2003 Er-doped SiO₂ with silicon nanocrystals as a new active optical medium

Irina N. Yassievich, Mikhail S. Bresler, Oleg B. Gusev, A. S. Moskalenko

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Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514386
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Properties of a new active optical medium, Er-doped SiO₂ with silicon nanocrystals, are discussed. We have considered in detail the mechanism of excitation of erbium ions by quantum confined electron-hole pairs in silicon nanocrystals, the diffusion of excitation over the erbium ions inserted into the silicon dioxide matrix and the lifetime of erbium in the excited state limited by de-excitation cneters (traps, "black holes") in SiO₂.

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Irina N. Yassievich, Mikhail S. Bresler, Oleg B. Gusev, and A. S. Moskalenko "Er-doped SiO₂ with silicon nanocrystals as a new active optical medium", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514386

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