Improvement of conductivity and breakdown cteristics of AlGaN/GaN HEMT structures in passivation experiments

S. Shapoval; V. Gurtovoi; A. Kovalchuk; Lester Fuess Eastman; A. Vertjachih; Christophe Gaquiere; David Theron

doi:10.1117/12.511539

11 June 2003 Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments

S. Shapoval, V. Gurtovoi, A. Kovalchuk, Lester Fuess Eastman, A. Vertjachih, Christophe Gaquiere, David Theron

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.511539
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We have studied interface properties of Si₃N₄/GaN structures by capacitance-voltage methods, paying attention to semiconductor surface treatments before insulator deposition. ECR plasma deposition of Si₃N₄ and ECR plasma treatments of semiconductor surfaces have been used. The interface state density depends on the hydrogen incorporation in ECR silicon nitride and its composition, which are the function of ECR deposition parameters. Optical properties and H-content of the films were characterized by ellipsometry and Fourier transform infrared (FTIR) spectroscopy, respectively. Minimum interface state density (1x10¹¹ cm^-2 eV^-1) has been observed for optimized composition Si₃N₄ films and ECR O₂ and CF₄ plasma treatment of GaN. After passivation by optimized Si₃N₄ films, there were observed improvement in breakdown voltage, increase in saturation current, output power, and power added efficiency for AlGaN/GaN HEMTs.

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S. Shapoval, V. Gurtovoi, A. Kovalchuk, Lester Fuess Eastman, A. Vertjachih, Christophe Gaquiere, and David Theron "Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511539

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