On the zero phonon line homogeneous broadening in semiconductor QDs

Serguei V. Goupalov; Robert A. Suris; P. Lavallard; David S. Citrin

doi:10.1117/12.513855

11 June 2003 On the zero phonon line homogeneous broadening in semiconductor QDs

Serguei V. Goupalov, Robert A. Suris, P. Lavallard, David S. Citrin

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513855
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Dephasing of optical excitations in semiconductor quantum dots (QDs) has recently received much attention. A common model used for understanding such processes is a two-level electronic system interacting with phonons. In our work we construct a consistent non-perturbative theory of the ZPL homogeneous broadening and resolve the contradictions by pointing out the limits of validity of the theoretical papers mentioned.

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Serguei V. Goupalov, Robert A. Suris, P. Lavallard, and David S. Citrin "On the zero phonon line homogeneous broadening in semiconductor QDs", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513855

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