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11 June 2003 Spin memory in the n-doped GaAs/AlGaAs quantum wells
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Abstract
The polarized luminescence spectra and kinetics of the GaAs quantum wells with excess free electrons are studied experimentally. Quantum beats between the exciton and electron spin sublevels, split by a magnetic field, are detected. The dynamics of the degree of polarization is found to contain a long component associated with slow relaxation of electron spins.
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S. Yu. Verbin, Yu. P. Efimov, V. M. Petrov, I. V. Ignatiev, Yu. K. Dolgikh, S. A. Eliseev, I. Ya Gerlovin, V. V. Ovsyankin, and Yasuaki Masumoto "Spin memory in the n-doped GaAs/AlGaAs quantum wells", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514466
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