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11 June 2003 Stimulated THz emission of acceptor-doped SiGe/Si
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Abstract
An intense THz emission was observed from strained SiGe/Si quantum-well structures under strong pulsed electric field. The p-type structures were MBE-grown on n-type Si substrate and δ-doped with boron. Lines with wavelengths near 100 microns were observed in the emission spectrum. The modal structure in the spectrum gave evidence for the stimulated nature of the emission. The origin of the THz emission was attributed to intracenter optical transitions between resonant and localized boron levels.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miron S. Kagan, Igor V. Altukhov, Elena G. Chirkova, Konstantin A. Korolev, Valery P. Sinis, R. T. Troeger, S. K. Ray, and James Kolodzey "Stimulated THz emission of acceptor-doped SiGe/Si", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514394
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