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11 June 2003 Terahertz emitting devices based on intersubband transitions in SiGe quantum wells
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Abstract
Terahertz electroluminescence was produced by intersubband transitions in silicongermanium quantum wells. The devices were grown by solid-source molecular-beam epitaxy on high-resistivity silicon substrates, and were fabricated by standard photolithography and processing techniques. Using FTIR spectroscopy at at temperature of 5 K, electroluminescence was observed around 9 THz. The emission was attributed to heavy-hole-to-light-hole transitions and demonstrates the potential for SiGe technology as terahertz emitters.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. N. Adam, R. T. Troeger, S. K. Ray, U. Lehmann, and James Kolodzey "Terahertz emitting devices based on intersubband transitions in SiGe quantum wells", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514391
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