Characterization of thin film semiconductor heterostructures using interference modes in wide spectral region

Nikolas L. Dmitruk; Oleg S. Gorea; T. A. Mikhailik; E. V. Pidlisnyi; Volodymyr R. Romaniuk; Thomas Wagner

doi:10.1117/12.497152

1 April 2003 Characterization of thin film semiconductor heterostructures using interference modes in wide spectral region

Nikolas L. Dmitruk, Oleg S. Gorea, T. A. Mikhailik, E. V. Pidlisnyi, Volodymyr R. Romaniuk, Thomas Wagner

Author Affiliations +

Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497152
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

The investigation of semiconductor GaAs/GaPAs heterostructures in wide spectral region from 0.3 to 70 μm were performed by excitation of interference modes. Such approach allows to avoid the ambiguity which arises at solving of inverse spectroscopic or ellipsometric problem. We propose to use the interference extremuma excited in the optical phonon region as a very sensitive to total thickness of heterostructure grown on doped substrate. The results show the interference method has a good sensitivity as well to chemical composition x of alloy as to geometrical parameters of corresponding films.

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Nikolas L. Dmitruk, Oleg S. Gorea, T. A. Mikhailik, E. V. Pidlisnyi, Volodymyr R. Romaniuk, and Thomas Wagner "Characterization of thin film semiconductor heterostructures using interference modes in wide spectral region", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497152

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