Generation of non-Gaussian fundamental modes in low-power end-pumped Nd:YVO4 microchip laser

Gilles Martel; C. Labbe; Francois Sanchez; M. Fromager; Kamel Ait-Ameur

doi:10.1117/12.498373

8 July 2003 Generation of non-Gaussian fundamental modes in low-power end-pumped Nd:YVO₄ microchip laser

Gilles Martel, C. Labbe, Francois Sanchez, M. Fromager, Kamel Ait-Ameur

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498373
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

Far-Field non-gaussian fundamental transverse modes have been obtained in CW end-pumped Nd:YVO₄ microchip laser for particular cavity lengths. Such profiles appear at threshold and are not distorted when pump power increases but they strongly depend on the pump to mode size ratio. An implemented theoretical model qualitatively reproduces these transverse profiles. It is based on the hypothesis of diffraction effects of the resonant intra-cavity field on a Gaussian gain profile. Dependence of the pump to mode size ratio on such profiles will be also theoretically explained.

Citation Download Citation

Gilles Martel, C. Labbe, Francois Sanchez, M. Fromager, and Kamel Ait-Ameur "Generation of non-Gaussian fundamental modes in low-power end-pumped Nd:YVO₄ microchip laser", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498373

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