Defect printability of hole pattern in electron projection lithography

Jiro Yamamoto; Yoichi Tomo; Sumito Shimizu; Teruo Iwasaki; Masaki Yamabe

doi:10.1117/12.484976

16 June 2003 Defect printability of hole pattern on electron projection lithography

Jiro Yamamoto, Yoichi Tomo, Sumito Shimizu, Teruo Iwasaki, Masaki Yamabe

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484976
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

We investigated the defect printability of hole patterns in electron projection lithograpy (EPL) using a diamond reticle with a programmed defect pattern. The reticle was fabricated by NTT-AT and wafer exposure was performemd using Nikon's EB projection experimental column. We simulated the defect printability to udnerstand in greater detail. We found that the mask error enhancement factor (MEF) of the size shift defect category exceeded the value of one and was degraded by the amount of beam blur. On the other hand, the printability of the dot defect category was lower than the shift category. In particular, pint hole defects smaller than 100 nm were not printed. However, the defect types of under size shift, truncation, edge intrusion, and corner intrusion (they decreased the opening area), actually increased the defect size because the defect was too small for hole patterns to print. In general, the defect printability of hole patterns depends on the beam blur, and the printed error size at the hole patterns getting larger than the line patterns. We have to pay clsoer attention to the hole pattern defect than to the line patterns.

Citation Download Citation

Jiro Yamamoto, Yoichi Tomo, Sumito Shimizu, Teruo Iwasaki, and Masaki Yamabe "Defect printability of hole pattern on electron projection lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484976

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